个人简介

谢海情，男，博士，教授，博士生导师，湖南省青年骨干教师，欧博官网“湖湘学者”人才计划（青年英才II岗）。主持国家自然科学基金1项，湖南省自然科学基金等课题10余项；企业委托技术开发横向课题7项（合同经费124万元），完成科技成果转化5项（转化金额123万元）。在国内外SCI/EI收录学术刊物发表科研论文30余篇，出版学术专著1部；授权国家发明专利5项、实用新型专利3项。

主要研究领域

微纳传感器与集成电路，重点在电源管理芯片、LED驱动芯片、微纳光电传感器芯片等方向开展研究工作。

教学情况

主要承担《模拟集成电路原理》、《半导体器件原理实验》、《随机信号分析与处理》等课程的教学与建设。

代表性论文

[1]Hai-Qing Xie, Jing-Shuo Liu, Kai-Yue Cui, Xin-Yue Wang, Zhi-Qiang Fan*. High-performance Schottky-barrier field-effect transistors based on two-dimensional GaN with Ag or Au contacts, Micro and Nanostructures, 191(2024) 207863

[2]Hai-Qing Xie, Kai-Yue Cui, Xi-Ya Cai, Zhi-Qiang Fan, Dan Wu. Two-dimensional SiC Schottky junctions with symmetrical and asymmetrical metal electrode contacts, Applied Surface Science, 605 (2022) 154699

[3]Hai-Qing Xie, Xi-Ya Cai, Kai-Yue Cui, Xin-Bo Yi, Jun-Lin Lu, Zhi-Qiang Fan. High-performance monolayer or bilayer SiC short channel transistors with metallic 1T-phase MoS2 contact, Physics Letters A, 436 (2022) 128070

[4]Hai-Qing Xie, Kai-Yue Cui, Xi-Ya Cai, Zhi-Qiang Fan. P-type doping induced performance improvement of two-dimensional SiC transistors with 1T-phase MoS2 electrode, Physics Letters A, 431 (2022) 128007

[5]Hai-Qing Xie, Kai-Yue Cui, Xin-Bo Yi, Jing-Shuo Liu, Zhi-Qiang Fan. Impact of P-type doping and channel length on the performance of 2D SiC MOSFET, Micro and Nanostructures, 184 (2023) 207683

[6]H.-Q. Xie, G. Liu, and X.-Y. Cai et al., Impact of Circular Layout on Characteristics in LSAMBM APD Based on SOI Film, Silicon, 14（5）：3395–3401 (2022)

[7]Haiqing Xie*，Zhenyu Wang，Gang Liu，Junlin Lu，Xinbo Yi. A novel active-input cascode current mirror with high precision and low power dissipation. Engineering Reports, 2021, doi: 10.1002/eng2.12451

[8]Hai-Qing Xie, Dan Wu, Xiao-Qing Deng, Zhi-Qiang Fan, Wu-Xing Zhou, Chang-Qing Xiang, and Yue-Yang Liu. Simulations of Monolayer SiC Transistors with Metallic 1T-Phase MoS2 Contact for High Performance Application, Chinese Physics B, 2021,30(11): 117102

[9]Xie Hai-Qing; Li Jie-Ying; Liu Gang; Cai Xi-Ya; Fan Zhi-Qiang. Impact of Gate-Source/Drain Underlap on the Performance of Monolayer SiC Schottky-Barrier Field-Effect Transistor, IEEE T. Electron Dev., 2020, 67(10):4130-4135

[10]Hai-Qing Xie^*, Yong-Da Peng, Jie-Ying Li, Li-Juan Wu. Lateral Separate Absorption Multi-Buffer Multiplication Avalanche Photodiode Based on SOI Film, IEEE T. Electron Dev., 2019，66(7): 3003-3006

[11]Hai-Qing Xie, Jie-Ying Li, Gang Liu, Xi-Ya Cai, Zhi-Qiang Fan^*. High-Performance Schottky-Barrier Field-Effect Transistors Based on Monolayer SiC Contacting Different Metals, IEEE T. Electron Dev., 2019, 66(12):5111-5116

[12]谢海情，宜新博，曾健平，曹武，谢进，凌佳琪. 基于神经网络的雪崩光电二极管SPICE模型构建，湖南大学学报(自然科学版)，2023，50(10):84-89

[13]谢海情, 王振宇, 曾健平, 等.一种低温漂高电源电压抑制比带隙基准电压源设计, 湖南大学学报(自然科学版)，2021，48(8):119-124

联系方式

E-mail: xiehq@csust.edu.cn

通讯地址：欧博官网（云塘校区）理科楼C307